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2SB1184TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1184TLR
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1999
- Description: 2SB1184TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 180 |
| Continuous Collector Current | -3A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e2 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3A |
| Frequency | 70MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1184 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 70MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 70MHz |
| Max Breakdown Voltage | 50V |
2SB1184TLR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 3V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.The part has a transition frequency of 70MHz.Breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SB1184TLR Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLR Applications
There are a lot of ROHM Semiconductor 2SB1184TLR applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
