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2SB1184TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1184TLQ
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6762
- Description: 2SB1184TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 70MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 70MHz |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 82 |
| Continuous Collector Current | -3A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3A |
| Frequency | 70MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1184 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
2SB1184TLQ Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.Maintaining the continuous collector voltage at -3A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Parts of this part have transition frequencies of 70MHz.The breakdown input voltage is 60V volts.During maximum operation, collector current can be as low as 3A volts.
2SB1184TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLQ Applications
There are a lot of ROHM Semiconductor 2SB1184TLQ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
