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2SB1183TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1183TL
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 293
- Description: 2SB1183TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transition Frequency | 150MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Additional Feature | BUILT-IN BIAS RESISTOR |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 1W |
| Transistor Application | AMPLIFIER |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.2mA, 600mA |
| Collector Emitter Breakdown Voltage | 40V |
2SB1183TL Overview
DC current gain in this device equals 1000 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.2mA, 600mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.As a result, the part has a transition frequency of 150MHz.Collector current can be as low as 2A volts at its maximum.
2SB1183TL Features
the DC current gain for this device is 1000 @ 500mA 2V
the vce saturation(Max) is 1.5V @ 1.2mA, 600mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 150MHz
2SB1183TL Applications
There are a lot of ROHM Semiconductor 2SB1183TL applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
