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2SB1181TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1181TLQ
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2263
- Description: 2SB1181TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 10W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1181 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 10W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 120 |
| Continuous Collector Current | -1A |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1181TLQ Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Continuous collector voltage should be kept at -1A for high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SB1181TLQ Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
2SB1181TLQ Applications
There are a lot of ROHM Semiconductor 2SB1181TLQ applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
