2SB1143T

2SB1143T Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Continuous collector voltage should be kept at 4A for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 50V volts that it can take.When collector current reaches its maximum, it can reach 4A volts.

2SB1143T Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SB1143T Applications

There are a lot of ON Semiconductor 2SB1143T applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting