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2SB1123T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SB1123T-TD-E
- Package: -
- Datasheet:
- Stock: 5318
- Description: 2SB1123T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Surface Mount | YES |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 2A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 150MHz |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 100 |
| DC Current Gain-Min (hFE) | 200 |
| Turn Off Time-Max (toff) | 480ns |
| Turn On Time-Max (ton) | 60ns |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1123T-TD-E Overview
The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.An emitter's base voltage can be kept at -6V to gain high efficiency.There is a transition frequency of 150MHz in the part.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 2A volts can be achieved.
2SB1123T-TD-E Features
a collector emitter saturation voltage of -300mV
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1123T-TD-E Applications
There are a lot of ON Semiconductor 2SB1123T-TD-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
