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2SB1121S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SB1121S-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 5683
- Description: 2SB1121S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Power Dissipation | 500mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Element Configuration | Single |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 75mA, 1.5A |
| Collector Emitter Breakdown Voltage | 25V |
| Max Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -600mV |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1121S-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 75mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 2A volts at its maximum.
2SB1121S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
2SB1121S-TD-E Applications
There are a lot of ON Semiconductor 2SB1121S-TD-E applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
