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2SAR533PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SAR533PT100
- Package: TO-243AA
- Datasheet:
- Stock: 6134
- Description: 2SAR533PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SAR533 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 50mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 300MHz |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 300MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 180 |
| Continuous Collector Current | -3A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
2SAR533PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 50mA 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 1A.A constant collector voltage of -3A is necessary for high efficiency.The emitter base voltage can be kept at -6V for high efficiency.In the part, the transition frequency is 300MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 3A volts can be achieved.
2SAR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2SAR533PT100 Applications
There are a lot of ROHM Semiconductor 2SAR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
