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2SAR522UBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SAR522UBTL
- Package: SC-85
- Datasheet:
- Stock: 5652
- Description: 2SAR522UBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-85 |
| Number of Pins | 85 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Other Transistors |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-F3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 200mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 350MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 350MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 120 |
| Continuous Collector Current | -200mA |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
2SAR522UBTL Overview
This device has a DC current gain of 120 @ 1mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.For high efficiency, the continuous collector voltage must be kept at -200mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 350MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2SAR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522UBTL Applications
There are a lot of ROHM Semiconductor 2SAR522UBTL applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
