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2SAR502EBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SAR502EBTL
- Package: SC-89, SOT-490
- Datasheet:
- Stock: 2499
- Description: 2SAR502EBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Weight | 29.993795mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Power Dissipation | 150mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Power - Max | 150mW |
| Gain Bandwidth Product | 520MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 200nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -150mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | -30V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 200 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SAR502EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Breakdown input voltage is 30V volts.The maximum collector current is 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor 2SAR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
