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2SA2202-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA2202-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 3183
- Description: 2SA2202-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.3W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 3.5W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Max Frequency | 1MHz |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | -120mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -7V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SA2202-TD-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -120mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 100mA, 1A.The base voltage of the emitter can be kept at -7V to achieve high efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 2A volts.
2SA2202-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 100mA, 1A
the emitter base voltage is kept at -7V
a transition frequency of 300MHz
2SA2202-TD-E Applications
There are a lot of ON Semiconductor 2SA2202-TD-E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
