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2SA2153-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA2153-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 524
- Description: 2SA2153-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.3W |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Element Configuration | Single |
| Power - Max | 3.5W |
| Gain Bandwidth Product | 420MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 1MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -6V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
2SA2153-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -6V to achieve high efficiency.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.
2SA2153-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
2SA2153-TD-E Applications
There are a lot of ON Semiconductor 2SA2153-TD-E applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
