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2SA2127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA2127
- Package: TO-226-3, TO-92-3 Long Body
- Datasheet:
- Stock: 3531
- Description: 2SA2127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 420MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| JEDEC-95 Code | TO-226AE |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 420MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 200 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SA2127 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.In this part, there is a transition frequency of 420MHz.A maximum collector current of 2A volts can be achieved.
2SA2127 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 420MHz
2SA2127 Applications
There are a lot of ON Semiconductor 2SA2127 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
