2SA2124-S-TD-E

2SA2124-S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SA2124-S-TD-E
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 4028
  • Description: 2SA2124-S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 3.5W
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 440MHz
RoHS Status RoHS Compliant

2SA2124-S-TD-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.When VCE saturation is 400mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SA2124-S-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 75mA, 1.5A

2SA2124-S-TD-E Applications


There are a lot of ON Semiconductor 2SA2124-S-TD-E applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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