2SA2056(TE85L,F)

2SA2056(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-2SA2056(TE85L,F)
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 2353
  • Description: 2SA2056(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 625mW
Number of Elements 1
Power Dissipation 625mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 300mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 33mA, 1A
Collector Emitter Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant

2SA2056(TE85L,F) Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 300mA 2V.A VCE saturation (Max) of 200mV @ 33mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In extreme cases, the collector current can be as low as 2A volts.

2SA2056(TE85L,F) Features


the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A
the emitter base voltage is kept at 7V

2SA2056(TE85L,F) Applications


There are a lot of Toshiba Semiconductor and Storage 2SA2056(TE85L,F) applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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