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2SA2018TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SA2018TL
- Package: SC-75, SOT-416
- Datasheet:
- Stock: 1535
- Description: 2SA2018TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 260MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SA2018 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 260MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 260MHz |
| Collector Emitter Saturation Voltage | -100mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | -15V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 270 |
| Continuous Collector Current | -500mA |
| Height | 700μm |
| Length | 1.7mm |
| Width | 900μm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SA2018TL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SA2018TL Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2018TL Applications
There are a lot of ROHM Semiconductor 2SA2018TL applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
