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2SA2013-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA2013-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 3462
- Description: 2SA2013-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.3W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 3.5W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 360MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 2A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 360MHz |
| Transition Frequency | 360MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 400MHz |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 200 |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SA2013-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 340mV @ 100mA, 2A.An emitter's base voltage can be kept at -6V to gain high efficiency.Parts of this part have transition frequencies of 360MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 4A volts.
2SA2013-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 340mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 360MHz
2SA2013-TD-E Applications
There are a lot of ON Semiconductor 2SA2013-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
