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2SA2012-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA2012-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 2051
- Description: 2SA2012-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3.5W |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 30mA, 1.5A |
| Collector Emitter Breakdown Voltage | 30V |
| Max Frequency | 1MHz |
| Transition Frequency | 350MHz |
| Collector Emitter Saturation Voltage | -260mV |
| Frequency - Transition | 420MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
2SA2012-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -260mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 350MHz.During maximum operation, collector current can be as low as 5A volts.
2SA2012-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 210mV @ 30mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SA2012-TD-E Applications
There are a lot of ON Semiconductor 2SA2012-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
