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2SA1962OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1962OTU
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 5234
- Description: 2SA1962OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 130W |
| Frequency | 30MHz |
| Base Part Number | 2SA1962 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 17A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 30MHz |
| Collector Base Voltage (VCBO) | -250V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 55 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SA1962OTU Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 30MHz.A maximum collector current of 17A volts is possible.
2SA1962OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1962OTU Applications
There are a lot of ON Semiconductor 2SA1962OTU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
