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2SA1962-O(Q)
  • 2SA1962-O(Q)

2SA1962-O(Q)

PNP150°C TJ5μA ICBO1 Elements3 TerminationsSILICONPNPTO-3P-3, SC-65-3TubeThrough Hole


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-2SA1962-O(Q)
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 5963
  • Description: PNP150°C TJ5μA ICBO1 Elements3 TerminationsSILICONPNPTO-3P-3, SC-65-3TubeThrough Hole(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation 130W
Current Rating -15A
Frequency 30MHz
Base Part Number 2SA1962
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage -1.5V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

2SA1962-O(Q) Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.30MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 15A volts.

2SA1962-O(Q) Features


the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

2SA1962-O(Q) Applications


There are a lot of Toshiba Semiconductor and Storage 2SA1962-O(Q) applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter
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