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2SA1955FVBTPL3Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SA1955FVBTPL3Z
- Package: SOT-723
- Datasheet:
- Stock: 9242
- Description: 2SA1955FVBTPL3Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 100mW |
| Polarity | PNP |
| Element Configuration | Single |
| Power - Max | 100mW |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 400mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 12V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 400mA |
| Collector Emitter Saturation Voltage | -30mV |
| Max Breakdown Voltage | 12V |
| Frequency - Transition | 130MHz |
| hFE Min | 300 |
| RoHS Status | RoHS Compliant |
2SA1955FVBTPL3Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -30mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.A breakdown input voltage of 12V volts can be used.Supplier device package VESM comes with the product.There is a 12V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 400mA volts can be achieved.
2SA1955FVBTPL3Z Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the supplier device package of VESM
2SA1955FVBTPL3Z Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
