2SA1952TLQ

2SA1952TLQ Overview

In this device, the DC current gain is 120 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 500mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at -5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SA1952TLQ Features

the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -5A
a transition frequency of 80MHz

2SA1952TLQ Applications

There are a lot of ROHM Semiconductor 2SA1952TLQ applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter