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Contact2SA1943N(S1,E,S)
PNP150°C TJ5μA ICBOTO-3P-3, SC-65-3TubeThrough Hole
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SA1943N(S1,E,S)
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 7875
- Description: PNP150°C TJ5μA ICBOTO-3P-3, SC-65-3TubeThrough Hole(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Weight | 6.961991g |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Polarity | PNP |
| Element Configuration | Single |
| Power - Max | 150W |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 230V |
| Voltage - Collector Emitter Breakdown (Max) | 230V |
| Current - Collector (Ic) (Max) | 15A |
| Collector Emitter Saturation Voltage | -1.1V |
| Frequency - Transition | 30MHz |
| Collector Base Voltage (VCBO) | -230V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 35 |
| Continuous Collector Current | -15A |
| RoHS Status | RoHS Compliant |
2SA1943N(S1,E,S) Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -15A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Supplier package TO-3P(N) contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 15A volts.
2SA1943N(S1,E,S) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the supplier device package of TO-3P(N)
2SA1943N(S1,E,S) Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1943N(S1,E,S) applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
