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Contact2SA1943-O(Q)
PNP150°C TJ5μA ICBO1 ElementsTO-3PLTubeThrough Hole
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SA1943-O(Q)
- Package: TO-3PL
- Datasheet:
- Stock: 9180
- Description: PNP150°C TJ5μA ICBO1 ElementsTO-3PLTubeThrough Hole(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Voltage - Rated DC | -230V |
| Max Power Dissipation | 150W |
| Current Rating | -15A |
| Frequency | 30MHz |
| Base Part Number | 2SA1943 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 230V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Saturation Voltage | -3V |
| Collector Base Voltage (VCBO) | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 80 |
| Height | 26mm |
| Length | 20.5mm |
| Width | 5.2mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SA1943-O(Q) Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In extreme cases, the collector current can be as low as 15A volts.
2SA1943-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
2SA1943-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1943-O(Q) applications of single BJT transistors.
Muting
Inverter
Driver
Interface
