2SA1774T1G

2SA1774T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SA1774T1G
  • Package: SC-75, SOT-416
  • Datasheet: pdf
  • Stock: 8456
  • Description: 2SA1774T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2SA1774
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Height 800μm
Length 1.65mm
Width 900μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3

2SA1774T1G Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SA1774T1G Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz

2SA1774T1G Applications


There are a lot of ON Semiconductor 2SA1774T1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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