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2SA1770S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1770S-AN
- Package: SC-71
- Datasheet:
- Stock: 568
- Description: 2SA1770S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | SC-71 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Max Power Dissipation | 1W |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 120MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 160V |
| Max Frequency | 1MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -6V |
| Height | 4.5mm |
| Length | 6.9mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SA1770S-AN Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As a result, it can handle voltages as low as 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SA1770S-AN Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
2SA1770S-AN Applications
There are a lot of ON Semiconductor 2SA1770S-AN applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
