2SA1759T100P

2SA1759T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SA1759T100P
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 5484
  • Description: 2SA1759T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Supplier Device Package MPT3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -400V
Max Power Dissipation 2W
Current Rating -500mA
Base Part Number 2SA1759
Polarity PNP
Element Configuration Single
Power - Max 2W
Gain Bandwidth Product 20MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 400V
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 400V
Frequency - Transition 12MHz
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) -7V
hFE Min 82
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SA1759T100P Overview


DC current gain in this device equals 82 @ 10mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -7V allows for a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, it can handle voltages as low as 400V volts.There is no device package available from the supplier for this product.The device exhibits a collector-emitter breakdown at 400V.A maximum collector current of 100mA volts can be achieved.

2SA1759T100P Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
the supplier device package of MPT3

2SA1759T100P Applications


There are a lot of ROHM Semiconductor 2SA1759T100P applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

In Stock

Please send RFQ , we will respond immediately.