2SA1727TLQ

2SA1727TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SA1727TLQ
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 6257
  • Description: 2SA1727TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC -400V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SA1727
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product 12MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 10mA, 100mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 12MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 7V
hFE Min 120
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SA1727TLQ Overview


DC current gain in this device equals 120 @ 50mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1V @ 10mA, 100mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 12MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 500mA volts.

2SA1727TLQ Features


the DC current gain for this device is 120 @ 50mA 5V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -500mA
a transition frequency of 12MHz

2SA1727TLQ Applications


There are a lot of ROHM Semiconductor 2SA1727TLQ applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

In Stock

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