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2SA1709S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1709S-AN
- Package: SC-71
- Datasheet:
- Stock: 8222
- Description: 2SA1709S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | SC-71 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Max Power Dissipation | 1W |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 120MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Max Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -220mV |
| Collector Base Voltage (VCBO) | -120V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 100 |
| Height | 4.5mm |
| Length | 6.9mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SA1709S-AN Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -220mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.When collector current reaches its maximum, it can reach 2A volts.
2SA1709S-AN Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -6V
2SA1709S-AN Applications
There are a lot of ON Semiconductor 2SA1709S-AN applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
