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2SA1708S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1708S-AN
- Package: SC-71
- Datasheet:
- Stock: 9317
- Description: 2SA1708S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mounting Type | Through Hole |
| Package / Case | SC-71 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Max Power Dissipation | 1W |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 120MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 40mA, 400mA |
| Collector Emitter Breakdown Voltage | 100V |
| Max Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -600mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Height | 4.5mm |
| Length | 6.9mm |
| Width | 2.5mm |
2SA1708S-AN Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.The breakdown input voltage is 100V volts.During maximum operation, collector current can be as low as 1A volts.
2SA1708S-AN Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
2SA1708S-AN Applications
There are a lot of ON Semiconductor 2SA1708S-AN applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
