2SA1705T-AN

2SA1705T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi


  • Manufacturer: Rochester Electronics
  • NO: 699-2SA1705T-AN
  • Package: SC-71
  • Datasheet: pdf
  • Stock: 192
  • Description: 2SA1705T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Package / Case SC-71
Supplier Device Package 3-NMP
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 150MHz
RoHS Status ROHS3 Compliant

2SA1705T-AN Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Supplier package 3-NMP contains the product.The device exhibits a collector-emitter breakdown at 50V.

2SA1705T-AN Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of 3-NMP

2SA1705T-AN Applications


There are a lot of Rochester Electronics, LLC 2SA1705T-AN applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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