2SA1705S-AN

2SA1705S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SA1705S-AN
  • Package: SC-71
  • Datasheet: pdf
  • Stock: 4627
  • Description: 2SA1705S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Current - Collector (Ic) (Max) 1A
Max Frequency 1MHz
Collector Emitter Saturation Voltage -180mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
Height 4.5mm
Length 6.9mm
Width 2.5mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 900mW
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V

2SA1705S-AN Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SA1705S-AN Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V

2SA1705S-AN Applications


There are a lot of ON Semiconductor 2SA1705S-AN applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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Please send RFQ , we will respond immediately.