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Contact2SA1587-GR,LF
2SA1587-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SA1587-GR,LF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 9990
- Description: 2SA1587-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Operating Temperature | 125°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 100mW |
| Reach Compliance Code | unknown |
| Power - Max | 100mW |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 120V |
| Max Breakdown Voltage | 120V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
2SA1587-GR,LF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 120V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2SA1587-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
2SA1587-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1587-GR,LF applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
