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2SA1507S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1507S
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4598
- Description: 2SA1507S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2010 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Max Power Dissipation | 1.5W |
| Frequency | 120MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 140 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
2SA1507S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at -6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 120MHz.Single BJT transistor can be broken down at a voltage of 160V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SA1507S Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1507S Applications
There are a lot of ON Semiconductor 2SA1507S applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
