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2SA1381CSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1381CSTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 3395
- Description: 2SA1381CSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Max Power Dissipation | 7W |
| Frequency | 150MHz |
| Base Part Number | 2SA1381 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 7W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 150MHz |
| Collector Base Voltage (VCBO) | -300V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| RoHS Status | RoHS Compliant |
2SA1381CSTU Overview
In this device, the DC current gain is 40 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.150MHz is present in the transition frequency.The maximum collector current is 100mA volts.
2SA1381CSTU Features
the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
2SA1381CSTU Applications
There are a lot of ON Semiconductor 2SA1381CSTU applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
