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2SA1182-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SA1182-Y,LF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5354
- Description: 2SA1182-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | 125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 150mW |
| Power - Max | 150mW |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | -35V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 25 |
| Continuous Collector Current | -500mA |
| RoHS Status | RoHS Compliant |
2SA1182-Y,LF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A constant collector voltage of -500mA is necessary for high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.This device can take an input voltage of 30V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.
2SA1182-Y,LF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
2SA1182-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1182-Y,LF applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
