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2SA1179N6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1179N6-TB-E
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 772
- Description: 2SA1179N6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 200mW |
| Reach Compliance Code | unknown |
| Frequency | 180MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Gain Bandwidth Product | 180MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -150mV |
| Collector Base Voltage (VCBO) | -55V |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1mm |
| Length | 2.93mm |
| Width | 1.3mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SA1179N6-TB-E Overview
This device has a DC current gain of 135 @ 1mA 6V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.Maximum collector currents can be below 150mA volts.
2SA1179N6-TB-E Features
the DC current gain for this device is 135 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
2SA1179N6-TB-E Applications
There are a lot of ON Semiconductor 2SA1179N6-TB-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
