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2SA1020 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SA1020
- Package: TO-226-3, TO-92-3 Long Body
- Datasheet:
- Stock: 3311
- Description: 2SA1020 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 900mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2SA1020 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 70 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2SA1020 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 1A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Parts of this part have transition frequencies of 100MHz.Collector current can be as low as 2A volts at its maximum.
2SA1020 Features
the DC current gain for this device is 70 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SA1020 Applications
There are a lot of ON Semiconductor 2SA1020 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
