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2PB1219AS,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-2PB1219AS,115
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 7534
- Description: 2PB1219AS,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Supplier Device Package | SC-70 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Frequency | 140MHz |
| Base Part Number | 2PB1219 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Power - Max | 200mW |
| Gain Bandwidth Product | 140MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Collector Emitter Breakdown Voltage | 50V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 500mA |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 140MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2PB1219AS,115 Overview
In this device, the DC current gain is 170 @ 150mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.An input voltage of 50V volts is the breakdown voltage.Product comes in SC-70 supplier package.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.Maximum collector currents can be below 500mA volts.
2PB1219AS,115 Features
the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the supplier device package of SC-70
2PB1219AS,115 Applications
There are a lot of Nexperia USA Inc. 2PB1219AS,115 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
