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2N7002V datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N7002V
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 5755
- Description: 2N7002V datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 32mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 7.5Ohm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 250mW |
| Terminal Form | FLAT |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250mW |
| Turn On Delay Time | 5.85 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.5 Ω @ 50mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Drain to Source Voltage (Vdss) | 60V |
| Turn-Off Delay Time | 12.5 ns |
| Continuous Drain Current (ID) | 280mA |
| Threshold Voltage | 1.76V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.76 V |
| Feedback Cap-Max (Crss) | 7 pF |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N7002V Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
2N7002V Features
ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
The site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are
RoHS Compliant
2N7002V Applications
Low Side Load Switch
Level Shift Circuits
DC?DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
