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2N7002DWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-2N7002DWH6327XTSA1
- Package: 6-VSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 6334
- Description: 2N7002DWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 500mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 3 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 300mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Rise Time | 3.3ns |
| Fall Time (Typ) | 3.1 ns |
| Turn-Off Delay Time | 5.5 ns |
| Continuous Drain Current (ID) | 115mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain Current-Max (Abs) (ID) | 0.3A |
| Drain-source On Resistance-Max | 3Ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 3 pF |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N7002DWH6327XTSA1 Description
Small signal bipolar junction transistors (BJT) rely on the contact between two different types of semiconductors to switch or amplify electronic signals and power supplies. Transistors are used in almost every modern electronic device, and BJT is often implemented as part of integrated circuits.
2N7002DWH6327XTSA1 Features
? Dual N-channel
? Enhancement mode
? Logic level
? Avalanche rated
? Fast switching
? Qualified according to AEC Q101
? 100% lead-free; RoHS compliant
? Halogen-free according to IEC61249-2-21
2N7002DWH6327XTSA1 Applications
modern electronic device
