2N7002DW

2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2N7002DW
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 7497
  • Description: 2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SC-88 (SC-70-6)
Weight 28mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 200mW
Turn On Delay Time 5.85 ns
Power - Max 200mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 12.5 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 1.76V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 78V
Input Capacitance 50pF
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Drain to Source Resistance 2Ohm
Rds On Max 7.5 Ω
Nominal Vgs 1.76 V
Height 1.1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
2N7002DW Description
:
The 2N7002 is a Logic Level N-channel MOSFET with a vertical DMOS structure and a well-proven silicon-gate manufacturing method that operates at low voltage and low current. This combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free of thermal runaway and thermally induced secondary breakdown, as is typical of all MOS architectures. Vertical DMOS FETs from Microchip are perfect for a variety of switching and amplifying applications that require a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is useful in power management applications due to its low on-state resistance and low input capacitance. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

2N7002DW Features

? Dual N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant

2N7002DW Applications
:
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.

In Stock

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