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2N6667 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6667
- Package: TO-220-3
- Datasheet:
- Stock: 9217
- Description: 2N6667 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 2W |
| Current Rating | -10A |
| Base Part Number | 2N6667 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 65W |
| Power - Max | 2W |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 3V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Collector Emitter Breakdown Voltage | 60V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 10A |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 10A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N6667 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 100mA, 10A.Continuous collector voltages should be kept at 10A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.Product comes in TO-220AB supplier package.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N6667 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
the supplier device package of TO-220AB
2N6667 Applications
There are a lot of ON Semiconductor 2N6667 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
