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2N6609 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6609
- Package: TO-204AA, TO-3
- Datasheet:
- Stock: 8207
- Description: 2N6609 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tray |
| Published | 2009 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn80Pb20) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -140V |
| Max Power Dissipation | 150W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -16A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2N6609 |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 16A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 8A 4V |
| Current - Collector Cutoff (Max) | 10mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 15 |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N6609 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.When VCE saturation is 4V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Its current rating is -16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts is possible.
2N6609 Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is -16A
a transition frequency of 4MHz
2N6609 Applications
There are a lot of ON Semiconductor 2N6609 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
