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2N6520RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6520RLRAG
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5535
- Description: 2N6520RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 350V |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Current - Collector (Ic) (Max) | 500mA |
| Max Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 350V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Contact Plating | Copper, Silver, Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 4.535924g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -350V |
| Max Power Dissipation | 625mW |
| Current Rating | -500mA |
| Frequency | 200MHz |
| Base Part Number | 2N6520 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Power - Max | 625mW |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | PNP |
2N6520RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).Single BJT transistor can be broken down at a voltage of 350V volts.Supplier device package TO-92-3 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 500mA volts.
2N6520RLRAG Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
the supplier device package of TO-92-3
2N6520RLRAG Applications
There are a lot of ON Semiconductor 2N6520RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
