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2N6491 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6491
- Package: TO-220-3
- Datasheet:
- Stock: 554
- Description: 2N6491 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 1.8W |
| Current Rating | 15A |
| Base Part Number | 2N6491 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 1.8W |
| Power - Max | 1.8W |
| Gain Bandwidth Product | 5MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 3.5V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A 4V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 5A, 15A |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 15A |
| Collector Emitter Saturation Voltage | 3.5V |
| Frequency - Transition | 5MHz |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
2N6491 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3.5V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 5A, 15A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 15A current rating.TO-220AB is the supplier device package for this product.Device displays Collector Emitter Breakdown (80V maximal voltage).When collector current reaches its maximum, it can reach 15A volts.
2N6491 Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
the supplier device package of TO-220AB
2N6491 Applications
There are a lot of ON Semiconductor 2N6491 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
