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2N6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6427
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 6660
- Description: 2N6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Current Rating | 1.2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2N6427 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 1.2V |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Continuous Collector Current | 500mA |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
2N6427 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 1.5V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A 500mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 1.2A volts at Single BJT transistors maximum.
2N6427 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 130MHz
2N6427 Applications
There are a lot of ON Semiconductor 2N6427 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
