2N6287

2N6287 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-2N6287
  • Package: TO-204AA, TO-3
  • Datasheet: pdf
  • Stock: 3379
  • Description: 2N6287 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
hFE Min 100
VCEsat-Max 3 V
Collector-Base Capacitance-Max 600pF
Height 8.7mm
Length 39.5mm
Width 26.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case TO-204AA, TO-3
Number of Pins 2
Weight 6.40101g
Transistor Element Material SILICON
Operating Temperature 200°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 160W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Current Rating -20A
Base Part Number 2N62
Number of Elements 1
Polarity PNP
Voltage 100V
Element Configuration Single
Current 20A
Power Dissipation 160W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V

2N6287 Darlington Transistor Description


The 2N6287 is a monolithic Darlington-based epitaxial-base NPN power transistor with a TO-3 metal casing. It's designed for low-frequency switching and general-purpose amplifiers. 2N6284 is the complementary PNP type. The 2N2687 has a Collector-Base voltage (IE = 0) of 100 V, a Collector-Emitter voltage (IB = 0) of 100 V and an Emitter-Base voltage (IC = 0) of 5 V.



2N6287 Darlington Transistor Features


Integrated collector-emitter antiparallel diode

High Current Gains: hFE = 4000 (Typ)

High DC Current Gain @ IC = 10 Adc

Pb-Free Packages are Available

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)



2N6287 Darlington Transistor Applications


Touch and Light Sensors

Display Drivers

Switching Applications

Power Regulators

Audio Amplifiers

Solenoid Control

DC-AC converters


In Stock

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