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2N6111 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-2N6111
- Package: TO-220-3
- Datasheet:
- Stock: 3849
- Description: 2N6111 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Base Part Number | 2N61 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3A 4V |
| Current - Collector Cutoff (Max) | 1mA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | -1V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 23 |
| Collector-Base Capacitance-Max | 250pF |
| Height | 15.75mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 40W |
| Current Rating | -7A |
| Frequency | 4MHz |
2N6111 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 3A 4V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 3.5V @ 3A, 7A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is -7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.4MHz is present in the transition frequency.The maximum collector current is 7A volts.
2N6111 Features
the DC current gain for this device is 30 @ 3A 4V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 4MHz
2N6111 Applications
There are a lot of STMicroelectronics 2N6111 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
