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2N6109G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N6109G
- Package: TO-220-3
- Datasheet:
- Stock: 2205
- Description: 2N6109G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 10MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A 4V |
| Current - Collector Cutoff (Max) | 1mA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 10MHz |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Height | 15.75mm |
| Length | 10.28mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7A |
| Frequency | 10MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2N6109 |
2N6109G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2.5A 4V.As it features a collector emitter saturation voltage of 3.5V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 3A, 7A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.The part has a transition frequency of 10MHz.Maximum collector currents can be below 7A volts.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor 2N6109G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
